Translartion. Region: Russians Fedetion –
Source: Novosibirsk State University – Novosibirsk State University –
A patent for the utility model “Photosensitive surface barrier structure based on germanosilicate glass for optoelectronics” was received by Novosibirsk State University. The authors of the development are scientists Analytical and technological research center “High technologies and nanostructured materials” Physics Department of NSUThe utility model relates to the field of semiconductor optoelectronics and can be used for optical information recording systems.
The photosensitive surface-barrier structure consists of a silicon substrate with a tunnel-thin dielectric layer of silicon oxide and a transparent conducting electrode, and a dielectric layer of germanosilicate glass (GeSixOy) is placed between them. This design allows recording photocurrent in a wide spectrum, with radiation absorption occurring both in the near-surface region of the substrate and in the dielectric layer consisting of germanosilicate glass.
— The structure of the photosensitive structure is layered. The technology of layer application is quite simple — this process is carried out by physical evaporation and magnetron sputtering in a vacuum, which ensures optimal electrical and optical properties. In the future, we plan to increase the number of layers in order to delve deeper into the infrared radiation area. But in the patent for a utility model that we received, only two types of structures are mentioned so far. The first is the simplest. It is a layer of silicon with a natural oxide, which is always present on this chemical element, germanosilicate glass and a metal contact of ITO (indium tin oxide). This results in a substrate and two layers. The second structure that we patented is more complex and is aimed at subsequent advancement into the infrared region of light absorption. We additionally introduce a germanium nanolayer onto the germanosilicate glass layer, explained Vladimir Volodin, leading researcher at the Laboratory of Functional Diagnostics of Low-Dimensional Structures for Nanoelectronics of the ATIC Department of the Physics Faculty of NSU, professor at the Department of General Physics, and Doctor of Physical and Mathematical Sciences.
The use of germanosilicate glass as a dielectric between the substrate and the transparent electrode significantly expands the spectral range in which the structure is capable of effectively registering photocurrent, in contrast to analogues created from less efficient materials.
The utility model is designed to increase the efficiency of recording optical signals in a wide spectral range, including visible and infrared. It will be useful in eliminating the shortcomings of traditional photosensitive structures – such as low photocurrent and the need to use high voltages and temperatures.
It should also be noted that the photodiodes used based on MIS structures with a Schottky diode do not use pn junctions, which simplifies the production technology and can lead to a reduction in the cost of the final product.
The photosensitive structures developed at NSU will find wide application in the field of optoelectronics and can be used in optical information recording systems, photodetectors, and sensors for various radiation ranges.
In the next part of the series of publications, we will talk about the development of a memory element from a new memristor material.
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